Decrease in the dielectric loss of CaCu₃Ti₄O₁₂ at high frequency by Ru doping

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• 作者：Weiwei Li ; Ting Zhang ; Shuo Liu ; Zhihong Lu ; ^{zludavid@live.com} ; Rui Xiong ; ^{xiongrui@whu.edu.cn}
• 关键词：CaCu3Ti4O12 ; Low dielectric loss ; Ruthenium ions doping
• 刊名：Ceramics International
• 出版年：2017
• 出版时间：1 April 2017
• 年：2017
• 卷：43
• 期：5
• 页码：4366-4371
• 全文大小：1005 K
• 卷排序：43

文摘

CaCu3−xRuxTi4O12 (x=0, 0.03, 0.05 and 0.07) electronic ceramics were fabricated using a conventional solid-state reaction method. The microstructure, grain sizes and dielectric properties as well as the impedance behaviours of the ceramics were carefully investigated. Scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) results indicate that ruthenium (Ru) dopant inhibits the growth of grains during the sintering process by promoting the formation of high melting point oxides of Ca and Ti. The study on the frequency dependence of dielectric properties suggests that Ru doping shifts the dielectric loss peak of CCTO to a much lower frequency, thereby reducing the dielectric loss of CCTO at high frequency (f>1.0 MHz) accordingly. When doped with proper amount of Ru, the high frequency dielectric loss of CCTO is reduced to a very low value (tanδ<0.05). Our study conclusively suggests that Ru-doped CCTO, with sufficiently low dielectric loss and decent permittivity, presents potential applications at high frequency.