Induced magnetism in transition metal-doped 1T-ZrS₂

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• 作者：Xu Zhao^a ; ^{zhaoxu@htu.cn} ; Tianxing Wang^a ; ; Shuyi Wei^a ; Xianqi Dai^a ; ^b ; Lin Yang^c
• 关键词：Magnetism ; Diluted magnetic semiconductors ; Electronic band structure
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：25 February 2017
• 年：2017
• 卷：695
• 期：Complete
• 页码：2048-2053
• 全文大小：2474 K
• 卷排序：695

文摘

Pristine 1T-ZrS2 is a semiconductor with indirect gaps of 1.106eV. Magnetism can be observed for V, Cr, Mn, Fe, Co, and Cu doped system. Strong p–d hybridization was found between TM 3d orbitals and S 3p orbitals. V-doped ZrS2 has relatively wide half-metallic gap (0.450eV).