Reaction chemistry of group IV containing copper chalcogenide semiconductors Cu₂MX₃ (M = Sn, Ge and X = S, Se)

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• 作者：Erika V.C. Robert ; ^{erika.robert@uni.lu} ; Jessica de Wild ^{jessica.dewild@uni.lu} ; Phillip J. Dale ^{phillip.dale@uni.lu}
• 关键词：Inorganic materials ; Semiconductors ; Thin films ; Gas-solid reactions
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：25 February 2017
• 年：2017
• 卷：695
• 期：Complete
• 页码：1307-1316
• 全文大小：2531 K
• 卷排序：695

文摘

A synthesis of Cu(Ge,Sn)(S,Se)3 from Cu and group IV chalcogenide vapour is shown. This method allows to establish equilibrium reactions occurring during annealing. They demonstrate the importance of (S,Se) and (Sn(S,Se), GeS) partial pressures. The rate of Cu(Ge,Sn)(S,Se)3 formation depends on this partial pressure.