Carbon nanotube assisted Lift off of GaN layers on sapphire

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• 作者：Hao Long^a ; Xiaohui Feng^b ; Yang Wei^c ; ^{WeiYang@mail.tsinghua.edu.cn} ; Tongjun Yu^b ; ^{tongjun@pku.edu.cn} ; Shoushan Fan^c ; Leiying Ying^a ; Baoping Zhang^a ; ^{bzhang@xmu.edu.cn}
• 关键词：Carbon nanotubes ; GaN ; Laser lift off ; Reduced laser threshold ; Lower residual stress
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：1 February 2017
• 年：2017
• 卷：394
• 期：Complete
• 页码：598-603
• 全文大小：2381 K
• 卷排序：394

文摘

Carbon nanotubes, as one of the most mature 1D nanostructure, were utilized to assist the GaN laser lift off from sapphire. Necessary laser threshold energy for GaN exfoliation from sapphire could be reduced by the insertion of carbon nanotubes. Only 0.3 GPa residual stress of GaN thin film was achieved in CNTs assisted laser lift off experiments. According to the finite element calculation, the effect of CNTs in GaN laser lift off could be described as powerful heating wires, conducting the thermal from CNTs to surround GaN material.