Photocarrier-phonon relaxation in highly excited monolayer transition-metal dichalcogenides

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• 作者：V.G. Morozov ; C. Dekeyser ; N. Ilyin ; E. Mishina ; ^{mishina_elena57@mail.ru}
• 关键词：A. Monolayer semiconductors ; D. Carrier-phonon relaxation
• 刊名：Solid State Communications
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：251
• 期：Complete
• 页码：32-34
• 全文大小：304 K
• 卷排序：251

文摘

A microscopic model describing interaction between photoinjected carriers and optical phonons in monolayer transition-metal dichalcogenides (2D directbandgap semiconductors) is proposed. The model takes account of the spin-valley structure of the conduction and valence bands. The evolution equations for the carrier and phonon quasitemperatures are derived and the carrier-phonon relaxation time is estimated. The theoretically obtained value of carrier-phonon relaxation times is found to be of the same order of magnitude as for many other 2D highly photoexcited polar semiconductors.