Transparent conductive Hf-doped In₂O₃ thin films by RF sputtering technique at low temperature annealing

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• 作者：G.H. Wang^a ; C.Y. Shi^b ; ^{shichengying@caict.ac.cn} ; L. Zhao^a ; H.W. Diao^a ; W.J. Wang^a
• 关键词：Transparent conductive oxide films ; Hf-doped In2O3 ; Radio frequency sputtering ; Hall mobility ; Low temperature annealing
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：31 March 2017
• 年：2017
• 卷：399
• 期：Complete
• 页码：716-720
• 全文大小：1777 K
• 卷排序：399

文摘

Hf-doped In2O3 transparent conductive films (IHFO) were investigated by sputtering. High mobility IHFO was prepared at a low substrate and thermal treatment temperature. IHFO showed high transmittance with above 83% in the range of 300–1500 nm. Optimized IHFO improved the efficiency of amorphous silicon germanium solar cell.