Two-terminal nonvolatile resistive switching memory devices based on n-CdSe NR/p-Si heterojunctions

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• 作者：Di Wu^a ; ^{wudi1205@zzu.edu.cn} ; Tingting Xu^a ; Zhifeng Shi^a ; Yongtao Tian^a ; Xinjian Li^a ; Yongqiang Yu^b ; Yang Jiang^b ; ^{apjiang@hfut.edu.cn}
• 关键词：CdSe nanoribbons ; Heterojunction ; Resistive switching ; Memory devices
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：25 February 2017
• 年：2017
• 卷：695
• 期：Complete
• 页码：1653-1657
• 全文大小：1981 K
• 卷排序：695

文摘

Ga-doped CdSe NRs were synthesized by a CVD method. Two-terminal nonvolatile memory based on n-CdSe NR/p-Si heterojunctions were fabricated. The memory devices exhibit excellent memory characteristics. The underlying mechanism of memory device is well discussed and explained.