Influence of oxidation temperature on the interfacial properties of n-type 4H-SiC MOS capacitors

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• 作者：Yifan Jia^a ; Hongliang Lv^a ; Qingwen Song^a ; ^b ; ^{qwsong@xidian.edu.cn} ; Xiaoyan Tang^a ; ^{xytang@xidian.edu.cn} ; Li Xiao^c ; Liangyong Wang^c ; Guangming Tang^c ; Yimen Zhang^a ; Yuming Zhang^a
• 关键词：4H-SiC MOS capacitors ; Thermal oxidation temperature ; Interfacial properties ; Effective fixed dielectric charge ; Near interface traps ; Interface states
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：1 March 2017
• 年：2017
• 卷：397
• 期：Complete
• 页码：175-182
• 全文大小：3633 K
• 卷排序：397

文摘

Effect of oxidation temperature on interfacial properties of SiO2/SiC is investigated. Raising the oxidation temperature effectively decreases the density of NITs and Neff. The higher oxidation temperature reduces the surface RMS roughness of the grow SiO2. SIMS and XPS results reveal the improvement mechanism of high temperature oxidation.