Fabrication and properties of pure-phase Cu₂O co-doped with zinc and indium

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• 作者：Xing-Min Cai^a ; Xiao-Qiang Su^a ; Fan Ye^a ; ^{yefan@szu.edu.cn} ; V.A.L. Roy^b ; Dong-Ping Zhang^a ; Jing-Ting Luo^a ; Ping Fan^a ; Zhuang-Hao Zheng^a ; Guang-Xing Liang^a ; Jun-Jun Xiao^c
• 关键词：Cuprous oxide ; Doping ; Zn ; In ; Electrical ; n-type
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：15 March 2017
• 年：2017
• 卷：697
• 期：Complete
• 页码：5-10
• 全文大小：1849 K
• 卷排序：697

文摘

The n-type conduction of doped Cu2O with pure-phase is realized. Zn and In exist as Zn2+ and In3+, and are possible donors in doped Cu2O. The metal-rich deposition suppresses generating acceptors such as copper vacancies. The metal-rich condition favors incorporating more donors. The increase in the voltage of the alloy target leads to metal-rich deposition.