A comparative study of Mg and Pt contacts on semi-insulating GaAs: Electrical and XPS characterization

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• 作者：F. Dubecký ; ^a ; ^{elekfdub@savba.sk} ; D. Kindl^b ; P. Hubí ; k^b ; M. Miču&scaron ; í ; k^c ; M. Dubecký ; ^d ; P. Bohá ; ček^a ; G. Vanko^a ; E. Gombia^e ; V. Nečas^f ; J. Mudroň^g
• 关键词：Semi-insulating GaAs ; Metal-semiconductor ; M-S contact ; Interface ; Work function ; Electrical charge transport ; XPS
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：395
• 期：Complete
• 页码：131-135
• 全文大小：628 K
• 卷排序：395

文摘

Explored were diodes with full-area low/high work function metal contacts on semi-insulating GaAs (S). The Mg-S-Mg diode is promising for radiation detectors for its low high-field current. The XPS analysis of Mg-S interface shows presence of MgO instead of Mg metal.