Behavior of GaSb (100) and InSb (100) surfaces in the presence of H₂O₂ in acidic and basic cleaning solutions

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• 作者：Dongwan Seo ; Jihoon Na ; Seunghyo Lee ; Sangwoo Lim ; ^{swlim@yonsei.ac.kr}
• 关键词：Gallium antimonide ; Indium antimonide ; Hydrochloric acid/hydrogen peroxide mixture ; Ammonium hydroxide/hydrogen peroxide mixture ; Oxidation
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：31 March 2017
• 年：2017
• 卷：399
• 期：Complete
• 页码：523-534
• 全文大小：2085 K
• 卷排序：399

文摘

Surface behavior of GaSb and InSb was investigated in acidic and basic solutions. H2O2 plays a key role in the surface oxidation of GaSb and InSb in acidic hydrochloric acid/hydrogen peroxide mixture (HPM) solution. GaSb and InSb surfaces were hardly oxidized in basic ammonium hydroxide/hydrogen peroxide mixture (APM) solution in the presence of H2O2. The effect of dilution of APM solution on the oxidation of the InSb surface was minimal. Surface characteristics of GaSb and InSb in HPM and APM solutions are mainly determined by the behaviors of the group III elements rather than the group V element.