Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO₂/Si interfaces with low defect densities

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• 作者：Bert Stegemann^a ; ^{bert.stegemann@htw-berlin.de} ; Karim M. Gad^b ; Patrice Balamou^a ; ^c ; Daniel Sixtensson^c ; Daniel Vö ; ssing^b ; Martin Kasemann^b ; Heike Angermann^c
• 关键词：Silicon oxide ; Tunnel oxide ; Surface photo voltage measurement ; Photoemission ; Interface state density ; Rapid thermal oxidation ; Wet-chemical oxidation ; Oxidation states
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：395
• 期：Complete
• 页码：78-85
• 全文大小：1814 K
• 卷排序：395

文摘

Fabrication of ultrathin SiO2 tunnel layers on c-Si. Correlation of electronic and chemical SiO2/Si interface properties revealed by XPS/SPV. Chemically abrupt SiO2/Si interfaces generate less interface defect states considerable.