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Silicon nanowires prepared by hydrogen-assisted rf-magnetron sputtering on bismuth-coated ITO glass
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文摘
Silicon nanowires(SiNWs) were prepared by rf-magnetron sputtering at 260 ℃. The grown temperature of SiNWs is below the melting point of Si-Bi alloy. The density of SiNWs first rises and then falls as the growing temperature increases. Hydrogen radicals treatment can reduce the synthesis temperature of SiNWs. The nano-crystalline ratio is in inverse proportion to grown temperature in SiNWs.

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