AlN film thickness effect on photoluminescence properties of AlN/carbon nanotubes shell/core nanostructures for deep ultra-violet optoelectronic devices

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• 作者：N. Ouldhamadouche^a ; ¹ ; A. Achour^b ; ¹ ; ^{a_aminph@yahoo.fr} ; K. Ait. Aissa^c ; M. Islam^d ; A. Ahmadpourian^e ; A. Arman^f ; M.A. Soussou^g ; M. Chaker^b ; L. Le Brizoual^h ; M.A. Djouadi^c
• 关键词：Aluminum nitride ; Carbon nanotubes ; Reactive magnetron sputtering ; Hybrid nanostructures ; Photoluminescence
• 刊名：Thin Solid Films
• 出版年：2017
• 出版时间：31 January 2017
• 年：2017
• 卷：622
• 期：Complete
• 页码：23-28
• 全文大小：1140 K
• 卷排序：622

文摘

AlN films with 50 to 1500 nm thickness were produced over vertically aligned CNTs. AlN/CNT shell/core assembly exhibits enhancement in PL properties. The 5.85 eV exciton band intensity maximizes for 600 nm think AlN film over CNTs. The AlN/CNT shell/core nanoassembly can be used for deep UV optoelectronic devices.