Effect of Ga doping and point defect on magnetism of ZnO

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• 作者：Qingyu Hou^a ; Chunwang Zhao^b ; ^{cwzhao@shmtu.edu.cn} ; Xiaofang Jia^a ; Lingfeng Qu^a
• 关键词：Ga doping ; Point defect ; ZnO ; Magnetism ; First-principle calculation
• 刊名：Physica B: Condensed Matter
• 出版年：2017
• 出版时间：1 February 2017
• 年：2017
• 卷：506
• 期：Complete
• 页码：109-114
• 全文大小：768 K
• 卷排序：506

文摘

The combined influence mechanism of Ga doping and Zn vacancy or O vacancy on magnetism of ZnO is studied using the first-principle calculation. The coexistence of Ga doping and Zn vacancy can achieve a Curie temperature higher than room temperature and the Ga doped ZnO system is a p-type diluted degenerate semiconductor with metalized ferromagnetism. The magnetism of the doping system of Ga doping and Zn vacancy is mainly contributed by double-exchange interaction through the holes of Zn vacancy taking carrier as medium. However, the system of Ga doping and O vacancy is non-magnetic. In the coexistence of Ga doping and Zn vacancy or O vacancy, a close relative distance between doping and vacancy will reduce the formation energy of the doping system but increase the easiness of doping and vacancy, as well as enhance the stability of the doping system.