Bottom-gate poly-Si thin-film transistors by nickel silicide seed-induced lateral crystallization with self-aligned lightly doped layer

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• 作者：Sol Kyu Lee ; Ki Hwan Seok ; Hee Jae Chae ; Yong Hee Lee ; Ji Su Han ; Hyeon Ah Jo ; Seung Ki Joo ; ^{skjoo@snu.ac.kr}
• 关键词：Bottom-gate ; Polycrystalline silicon (poly-Si) ; Thin-film transistor (TFT) ; Self-aligned ; Hot-carrier ; Kink-effect
• 刊名：Solid-State Electronics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：129
• 期：Complete
• 页码：6-9
• 全文大小：1252 K
• 卷排序：129

文摘

We demonstrated LDL-TFTs with stable operations under high drain voltage without an additional mask. The proposed LDL-TFT shows high electrical performance with stable operation under high drain voltage. The device structures and fabrication steps are almost identical to those of a-Si TFT.