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Analytical modeling of highly tunable giant lateral shift in total reflection of light beams from a graphene containing structure
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文摘
A circuit model is proposed for investigation of a graphene containing structure. Giant Goos-Hänchen shift in a graphene containing structure is analytically studied. Large values of shift is achieved by coupling into surface waves of the structure. Lateral shift is tuned by applying an external voltage to the graphene layer. 215 λ0 tuning in the lateral shift is achieved by 2.5 V change in the voltage.

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