Experimental study on the 4H-SiC-based VDMOSFETs with lightly doped P-well field-limiting rings termination

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• 作者：Yan Jing He^a ; ^b ; Hong Liang Lv^a ; ^b ; Xiao Yan Tang^a ; ^b ; ^{xytang@mail.xidian.edu.cn} ; Qing Wen Song^b ; ^c ; Yi Meng Zhang^a ; ^b ; Chao Han^a ; ^b ; Yi Men Zhang^a ; ^b ; Yu Ming Zhang^a ; ^b
• 关键词：4H-SiC ; VDMOSFET ; Breakdown voltage ; Junction termination
• 刊名：Solid-State Electronics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：129
• 期：Complete
• 页码：175-181
• 全文大小：2539 K
• 卷排序：129

文摘

Lightly doped P-well FLRs on 4H-SiC VDMOSFETs were optimized and fabricated. The P-well FLRs possess lower interface damage in the termination region. The P-well FLRs achieve 90% of the plane parallel breakdown voltage.