Performance enhancement of AlGaN/GaN nanochannel omega-FinFET

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• 作者：Ki-Sik Im^a ; Jae Hwa Seo^b ; Sindhuri Vodapally^b ; In Man Kang^b ; Jae-Hoon Lee^c ; Sorin Cristoloveanu^d ; Jung-Hee Lee^b ; ^{jlee@ee.knu.ac.kr}
• 关键词：AlGaN/GaN ; Nanochannel ; Omega-gate ; FinFET ; 2DEG ; Breakdown voltage ; Subthreshold slope
• 刊名：Solid-State Electronics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：129
• 期：Complete
• 页码：196-199
• 全文大小：553 K
• 卷排序：129

文摘

AlGaN/GaN omega-FinFETs were fabricated using TMAH wet etching with HfO2 sidewall spacer. The proposed device exhibits excellent performance in both on-state and off-state. This is because the current spreads from the narrow fin to the wide access which supported by the device simulation results. The device shows the excellent gate controllability with completely separated channel region from the GaN buffer.