Atomic oxygen irradiation resistance of transparent conductive oxide thin films

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• 作者：Qi Ouyang ; Wenwen Wang ; ^{08569@buaa.edu.cn} ; Qiang Fu ; Dongmei Dong
• 关键词：Tungsten-doped indium oxide thin films ; Tin-doped indium oxide thin films ; Radio frequency reactive magnetron sputtering ; Atomic oxygen irradiation ; Optical and electrical properties
• 刊名：Thin Solid Films
• 出版年：2017
• 出版时间：1 February 2017
• 年：2017
• 卷：623
• 期：Complete
• 页码：31-39
• 全文大小：2535 K
• 卷排序：623

文摘

In2O3:W (IWO) and In2O3:Sn (ITO) films were obtained by RF magnetron sputtering. Atomic oxygen (AO) has oxidation and erosion effects on ITO and IWO films. AO resistance of IWO and ITO films were compared and analyzed. Incremental WO3 in IWO films can serve as protective layer under AO oxidation. IWO films can be better candidates for anti-AO applications than ITO films.