A new type of low power read circuit in EEPROM for UHF RFID

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• 作者：Yongqian Du ; ^{duyongqian1982@gmail.com} ; Xiaoming Li ^{imlxm@126.com} ; Li Dai ^{daili.xidian@gmail.com} ; Xin Jing ^{jingxin_xd@yahoo.com.cn} ; Zhenrong Li ^{zrli@mail.xidian.edu.cn} ; Hualian Tang ^{lily_thl@126.com} ; Yiqi Zhuang ^{yqzhuang@163.com}
• 关键词：RFID ; Sense amplifier ; EEPROM ; Low-power ; Read circuit
• 刊名：Microelectronics Journal
• 出版年：2012
• 出版时间：June, 2012
• 年：2012
• 卷：43
• 期：6
• 页码：364-369
• 全文大小：836 K

文摘

A novel low power read circuit without reference in 1 k-bits electrically erasable and programmable (EEPROM) for UHF RFID is designed and implemented in SMIC 0.18 ¦Ìm EEPROM process. The read power consumption is optimized using a pre-charge sense amplifier. To improve the performance of the read circuit, a self-detect circuit, a read control logic and a feedback scheme are adopted, combined with a special time sequence. For a power supply voltage of 1 V, an average power consumption of 1.6 ¦ÌA for the read operation of the EEPROM can be achieved when the read clock frequency is 640 kHz. What is more, with a 110 ¡ãC temperature change, the read power consumption variation is as low as 12 % . The die size of the EEPROM is 0.15 mm², where the read circuit occupies 0.0125 mm².