Nonstoichiometric Low-Temperature Grown GaAs Nanowires

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• 作者：Adrian D铆az 脕lvarez ; Tao Xu ; G枚zde T眉t眉nc眉oglu ; Thomas Demonchaux ; Jean-Philippe Nys ; Maxime Berthe ; Federico Matteini ; Heidi A. Potts ; David Troadec ; Gilles Patriarche ; Jean-Fran莽ois Lampin ; Christophe Coinon ; Anna Fontcuberta i Morral ; Rafal E. Dunin-Borkowski ; Philipp Ebert ; Bruno Grandidier
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：October 14, 2015
• 年：2015
• 卷：15
• 期：10
• 页码：6440-6445
• 全文大小：386K
• ISSN：1530-6992

文摘

The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump鈥損robe reflectivity, and cathodoluminescence measurements. The growth of nonstoichiometric GaAs shells is achieved through the formation of As antisite defects, and to a lower extent, after annealing, As precipitates. Because of the high density of atomic steps on the nanowire sidewalls, the Fermi level is pinned midgap, causing the ionization of the subsurface antisites and the formation of depleted regions around the As precipitates. Controlling their incorporation offers a way to obtain unique electronic and optical properties that depart from the ones found in conventional GaAs nanowires.