Strain-Gated Field Effect Transistor of a MoS2–ZnO 2D–1D Hybrid Structure

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• 作者：Libo Chen ; Fei Xue ; Xiaohui Li ; Xin Huang ; Longfei Wang ; Jinzong Kou ; Zhong Lin Wang
• 刊名：ACS Nano
• 出版年：2016
• 出版时间：January 26, 2016
• 年：2016
• 卷：10
• 期：1
• 页码：1546-1551
• 全文大小：433K
• ISSN：1936-086X

文摘

Two-dimensional (2D) molybdenum disulfide (MoS₂) is an exciting material due to its unique electrical, optical, and piezoelectric properties. Owing to an intrinsic band gap of 1.2–1.9 eV, monolayer or a-few-layer MoS₂ is used for fabricating field effect transistors (FETs) with high electron mobility and on/off ratio. However, the traditional FETs are controlled by an externally supplied gate voltage, which may not be sensitive enough to directly interface with a mechanical stimulus for applications in electronic skin. Here we report a type of top-pressure/force-gated field effect transistors (PGFETs) based on a hybrid structure of a 2D MoS₂ flake and 1D ZnO nanowire (NW) array. Once an external pressure is applied, the piezoelectric polarization charges created at the tips of ZnO NWs grown on MoS₂ act as a gate voltage to tune/control the source–drain transport property in MoS₂. At a 6.25 MPa applied stimulus on a packaged device, the source–drain current can be tuned for ～25%, equivalent to the results of applying an extra ?5 V back gate voltage. Another type of PGFET with a dielectric layer (Al₂O₃) sandwiched between MoS₂ and ZnO also shows consistent results. A theoretical model is proposed to interpret the received data. This study sets the foundation for applying the 2D material-based FETs in the field of artificial intelligence.