Synthesis, Characterization, and Application of Indolo[3,2-b]carbazole Semiconductors

详细信息    查看全文

• 作者：Pierre-Luc T. Boudreault ; Salem Wakim ; Nicolas Blouin ; Michel Simard ; Christian Tessier ; Ye Tao ; Mario Leclerc
• 刊名：Journal of the American Chemical Society
• 出版年：2007
• 出版时间：July 25, 2007
• 年：2007
• 卷：129
• 期：29
• 页码：9125 - 9136
• 全文大小：718K
• 年卷期：v.129,no.29(July 25, 2007)
• ISSN：1520-5126

文摘

The synthesis, characterization, and field-effect transistor (FET) properties of new indolo[3,2-b]carbazoles are described. In particular, an extensive characterization of their crystal structures has revealedthe importance of the nature of the side chains (alkyl, phenyl, thienyl substituents) on their solid-stateorganization. These organic materials have exhibited p-type FET behavior with hole mobilities as high as0.2 cm² V^-1 s^-1 with an on/off current ratio higher than 10⁶. Best results were obtained with phenyl-substitutedindolo[3,2-b]carbazoles since the presence of phenyl substituents seems to allow efficient overlap betweenthe oligomeric molecules. More importantly, FET properties were kept constant during several months inair.