The self-assembled growth of vertically well-aligned ZnO nanorod arrays with uniform
length and diameteron Si substrate has been demonstrated via thermal evaporation and vapor-phase transport. The structural,photoluminescence (PL), and field emission properties of the as-prepared nanorod arrays were investigated.The PL spectrum at 10 K shows a strong and sharp near-band gap emission (NBE) peak (full width at half-maximum (FWHM) = 4.7 meV) and a weak neglectable deep-level emission (DL) peak (
INBE/
IDL= 220),which implies its good crystallinity and high optical quality. The room-temperature NBE peak was deducedto the composition of free exciton and its first-order replicas emissions by temperature-dependent PL spectra.The field emission measurements indicate that, with a vacuum gap of 400
m, the turn-on field and thresholdfield is as low as 2.3 and 4.2 V/
m. The field enhancement factor
and vacuum gap
d follows a universalequation.