High-Density, Aligned SiO2 Nanowire Arrays: Microscopic Imaging of the Unique Growth Style and Their Ultraviolet Light Emission Properties

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• 作者：Zhidong Xiao ; Lide Zhang ; Guowen Meng ; Xike Tian ; Haibo Zeng ; Ming Fang
• 刊名：Journal of Physical Chemistry B
• 出版年：2006
• 出版时间：August 17, 2006
• 年：2006
• 卷：110
• 期：32
• 页码：15724 - 15728
• 全文大小：676K
• 年卷期：v.110,no.32(August 17, 2006)
• ISSN：1520-5207

文摘

High-density, free-standing SiO₂ nanowire arrays were successfully fabricated by a simple chemical vapordeposition method through a controlled pattern of the micrometer-sized alloyed balls on the Si substratecombined with a local balanced and steady-state reaction vapor environment. The direct observation of temporalevolution of the SiO₂ nanowire growth process via the microscopic imaging approach offers us amazingpictures related to the unique vapor-liquid-solid (VLS) growth styles. These novel results are beneficial tounderstanding the formation mechanism of silica nanowire arrays, and at the same time, they extend ourknowledge of VLS growth phenomena. The stable and strong ultraviolet emission properties of the as-grownproducts are of significant interest for their potential applications related to nanoscale optoelectronic deviceincluding ultraviolet-light-emitting devices, etc.