Fabrication of 3D Macroporous Structures of II-VI and III-V Semiconductors Using Electrochemical Deposition

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• 作者：Yi-Cheng Lee ; Tsung-Jung Kuo ; Chih-Jung Hsu ; Ya-Wen Su ; and Chia-Chun Chen
• 刊名：Langmuir
• 出版年：2002
• 出版时间：December 10, 2002
• 年：2002
• 卷：18
• 期：25
• 页码：9942 - 9946
• 全文大小：132K
• 年卷期：v.18,no.25(December 10, 2002)
• ISSN：1520-5827

文摘

Close-packed three-dimensional (3D) arrays of silica spheres assembled on an indium tin oxide (ITO)substrate surface have been prepared using sedimentation in the solution. Both galvanostatic andpotentiostatic electrochemical depositions have been tested to infiltrate six different semiconductors, ZnSe,PbSe, CdSe, CdS, CdTe, and GaAs, onto the 3D silica arrays. The detailed studies of deposition parameterssuch as current density, deposition time, concentrations of electrolytes, solvents, and temperatures wereperformed to ensure the quality of resulting semiconductor films on the arrays. Followed by the removalof the silica arrays, 3D macroporous structures made from those semiconductors were obtained, and thestructures exhibited 3D periodicity and uniformity. Clear diffraction peaks at ~1350 nm of CdSe and CdSmacroporous films were observed.