We
present Raman s
cattering results on
crystalline Si
1-xGe
x nanowires (0 <
x < 1) grown by the va
por-liquid-solid growth me
chanism using
chemi
cal va
por de
position. Ty
pi
cal nanowire diameters and lengthswere in the range 80-110 nm and 15-40
m, res
pe
ctively. Three strong Raman bands were observed andidentified as
perturbed Si-Si (~500
cm
-1) modes,
perturbed Ge-Ge (~280
cm
-1) modes, and intermediatefrequen
cy (~400
cm
-1) modes assigned to Si-Ge
clusters. A broad band is observed in the range ~75-110
cm
-1 that is assigned to transverse a
cousti
c modes. The
com
positional de
penden
ce of these Raman bands issimilar to what is observed in bulk material and is also found to be in very good agreement with the re
cently
cal
culated vibrational density of states for Si
1-xGe
x nano
parti
cles.