Raman Scattering from Si1-xGex Alloy Nanowires

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• 作者：Qiujie Lu ; Kofi W. Adu ; Humberto R. Gutié ; rrez ; Gugang Chen ; Kok-Keong Lew ; Pramod Nimmatoori ; Xi Zhang ; Elizabeth C. Dickey ; Joan M. Redwing ; Peter C. Eklund
• 刊名：Journal of Physical Chemistry C
• 出版年：2008
• 出版时间：March 6, 2008
• 年：2008
• 卷：112
• 期：9
• 页码：3209 - 3215
• 全文大小：589K
• 年卷期：v.112,no.9(March 6, 2008)
• ISSN：1932-7455

文摘

We present Raman scattering results on crystalline Si_1-xGe_x nanowires (0 < x < 1) grown by the vapor-liquid-solid growth mechanism using chemical vapor deposition. Typical nanowire diameters and lengthswere in the range 80-110 nm and 15-40 m, respectively. Three strong Raman bands were observed andidentified as perturbed Si-Si (~500 cm^-1) modes, perturbed Ge-Ge (~280 cm^-1) modes, and intermediatefrequency (~400 cm^-1) modes assigned to Si-Ge clusters. A broad band is observed in the range ~75-110cm^-1 that is assigned to transverse acoustic modes. The compositional dependence of these Raman bands issimilar to what is observed in bulk material and is also found to be in very good agreement with the recentlycalculated vibrational density of states for Si_1-xGe_x nanoparticles.