Schottky Barrier Photodetectors Based on Mg0.40Zn0.60O Thin Films

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• 作者：Dayong Jiang ; Chongxin Shan ; Jiying Zhang ; Youming Lu ; Bin Yao ; Dongxu Zhao ; Zhenzhong Zhang ; Xiwu Fan ; Dezhen Shen
• 刊名：Crystal Growth & Design
• 出版年：2009
• 出版时间：January 7, 2009
• 年：2009
• 卷：9
• 期：1
• 页码：454-456
• 全文大小：157K
• 年卷期：v.9,no.1(January 7, 2009)
• ISSN：1528-7505

文摘

Wurtzite (Mg_0.40Zn_0.60O) thin films have been grown on quartz substrates by using the radio frequency magnetron sputtering technique, and a metal−semiconductor−metal Schottky barrier photodetector has been fabricated from these films. The photodetector exhibits a peak responsivity at 276 nm and a very sharp cutoff wavelength at 295 nm corresponding to the absorption edge of the Mg_0.40Zn_0.60O thin film. At 2 V bias, the detectivity of the photodetector is 1.1 × 10¹² (cm Hz^1/2)/W at 276 nm, and the ultraviolet-to-visible rejection ratio [R(276 nm)/R(400 nm)] is about 4 orders of magnitude. The photodetector also exhibits a very low dark current of about 100 pA at 2 V bias.