Correlation between in Situ Raman Scattering and Electrical Conductance for an Individual Double-Walled Carbon Nanotube

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• 作者：Shaoning Yuan ; Qing Zhang ; Yumeng You ; Ze-Xiang Shen ; Daisuke Shimamoto ; Morinobu Endo
• 刊名：Nano Letters
• 出版年：2009
• 出版时间：January 14, 2009
• 年：2009
• 卷：9
• 期：1
• 页码：383-387
• 全文大小：237K
• 年卷期：v.9,no.1(January 14, 2009)
• ISSN：1530-6992

文摘

In situ Raman scattering is performed on an individual semiconducting double-walled carbon nanotube (DWNT) in a field-effect transistor (FET) geometry, while the transfer characteristics of the DWNT-FET are measured. Through studying the Raman spectra with response to forward and backward gate voltage (V_gs) sweeping, respectively, we observe hysteresis loops in the curves of G⁻ peak frequency and the intensity ratio of G⁻ to G⁺ (I_G⁻/I_G⁺) as a function of V_gs. These loops correlate very well with the hysteretic transfer characteristics of the device. The clear correlations suggest that G⁻ peak line width and I_G⁻/I_G⁺ increase with the carrier concentration in the DWNT induced by V_gs. In addition, unique G⁻ peak line width variations with V_gs can be attributed to interband electron transitions between the energy bands of two concentric shells of the DWNT excited by G phonons.