Well-Aligned Zn-Doped InN Nanorods Grown by Metal-Organic Chemical Vapor Deposition and the Dopant Distribution

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• 作者：Huaping Song ; Anli Yang ; Riqing Zhang ; Yan Guo ; Hongyuan Wei ; Gaolin Zheng ; Shaoyan Yang ; Xianglin Liu ; Qinsheng Zhu ; Zhanguo Wang
• 刊名：Crystal Growth & Design
• 出版年：2009
• 出版时间：July 1, 2009
• 年：2009
• 卷：9
• 期：7
• 页码：3292-3295
• 全文大小：228K
• 年卷期：v.9,no.7(July 1, 2009)
• ISSN：1528-7505

文摘

We report the synthesis and characterization of Zn-doped InN nanorods by metal-organic chemical vapor deposition. Electron microscopy images show that the InN nanorods are single-crystalline structures and vertically well-aligned. Energy-dispersive X-ray spectroscopy analyses suggest that Zn ions are distributed nonhomogenously in InN nanorods. Simulations based on diffusion model show that the doping concentration along the radial direction of InN nanorod is bowl-like: from the exterior to the interior, the doping concentration decreases, and such dopant distribution result in a bimodal EDXS spectrum of Zn across the nanorod. The study of the mechanism of doping effect is useful for the design of InN-based nanometer devices. Also, high-quality Zn-doped InN nanorods will be very attractive as building blocks for nano-optoelectronic devices.