A Flexible Amorphous Bi5Nb3O15 Film for the Gate Insulator of the Low-Voltage Operating Pentacene Thin-Film Transistor Fabricated at Room Temperature

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• 作者：Kyung-Hoon Cho ; Tae-Geun Seong ; Joo-Young Choi ; Jin-Seong Kim ; Jae-Hong Kwon ; Sang-Il Shin ; Myung-Ho Chung ; Byeong-Kwon Ju ; Sahn Nahm
• 刊名：Langmuir
• 出版年：2009
• 出版时间：October 20, 2009
• 年：2009
• 卷：25
• 期：20
• 页码：12349-12354
• 全文大小：919K
• 年卷期：v.25,no.20(October 20, 2009)
• ISSN：1520-5827

文摘

The amorphous Bi₅Nb₃O₁₅ film grown at room temperature under an oxygen-plasma sputtering ambient (BNRT-O₂ film) has a hydrophobic surface with a surface energy of 35.6 mJ m⁻², which is close to that of the orthorhombic pentacene (38 mJ m⁻²), resulting in the formation of a good pentacene layer without the introduction of an additional polymer layer. This film was very flexible, maintaining a high capacitance of 145 nF cm⁻² during and after 10⁵ bending cycles with a small curvature radius of 7.5 mm. This film was optically transparent. Furthermore, the flexible, pentacene-based, organic thin-film transistors (OTFTs) fabricated on the poly(ether sulfone) substrate at room temperature using a BNRT-O₂ film as a gate insulator exhibited a promising device performance with a high field effect mobility of 0.5 cm² V⁻¹ s⁻¹, an on/off current modulation of 10⁵, and a small subthreshold slope of 0.2 V decade⁻¹ under a low operating voltage of −5 V. This device also maintained a high carrier mobility of 0.45 cm² V⁻¹ s⁻¹ during the bending with a small curvature radius of 9 mm. Therefore, the BNRT-O₂ film is considered a promising material for the gate insulator of the flexible, pentacene-based OTFT.