J-Aggregation in -Sexithiophene Submonolayer Films on Silicon Dioxide

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• 作者：Enrico Da Como ; Maria Antonietta Loi ; Mauro Murgia ; Roberto Zamboni ; and Michele Muccini
• 刊名：Journal of the American Chemical Society
• 出版年：2006
• 出版时间：April 5, 2006
• 年：2006
• 卷：128
• 期：13
• 页码：4277 - 4281
• 全文大小：372K
• 年卷期：v.128,no.13(April 5, 2006)
• ISSN：1520-5126

文摘

We report on the observation of J-aggregates in submonolayer films of -sexithiophene grownon silicon dioxide. Photoluminescence spectroscopy reveals that submonolayers are formed by moleculeslying flat on the substrate with a head to tail configuration. Excitation energy dependence of photoluminescence shows a red-shifted absorption with respect to isolated molecules and a negligible Stokes shiftbetween absorption and emission. The pronounced structural order of J-aggregates is reflected in the fwhmof the emission bands. From time-resolved and low-temperature photoluminescence experiments, we infera quantum yield of the J-aggregate between 0.6 and 1. The demonstration of spontaneous formation ofJ-aggregates of -conjugated systems on amorphous silicon-based substrates can be relevant for thedevelopment of organic-inorganic hybrid photonic devices.