Effects of Charge Impurities and Laser Energy on Raman Spectra of Graphene

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• 作者：Martin Hulman ; Miroslav Haluš ; ka ; Giusy Scalia ; Dirk Obergfell ; Siegmar Roth
• 刊名：Nano Letters
• 出版年：2008
• 出版时间：November 12, 2008
• 年：2008
• 卷：8
• 期：11
• 页码：3594-3597
• 全文大小：136K
• 年卷期：v.8,no.11(November 12, 2008)
• ISSN：1530-6992

文摘

The position and width of the Raman G-line was analyzed for unintentionally doped single-layered graphene samples. Results indicate a significant heating of the monolayer by the laser beam. Moreover, a weak additional component was resolved in the G-band. The position of the line is independent of the level of doping of the sample. We conclude that this new component is due to the phonons coupled to the intraband electronic transitions.