Very High Frequency Silicon Nanowire Electromechanical Resonators

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• 作者：X. L. Feng ; Rongrui He ; Peidong Yang ; M. L. Roukes
• 刊名：Nano Letters
• 出版年：2007
• 出版时间：July 2007
• 年：2007
• 卷：7
• 期：7
• 页码：1953 - 1959
• 全文大小：355K
• 年卷期：v.7,no.7(July 2007)
• ISSN：1530-6992

文摘

We demonstrate very high frequency (VHF) nanomechanical resonators based upon single-crystal silicon nanowires (SiNWs), which are preparedby the bottom-up chemical synthesis. Metallized SiNW resonators operating near 200 MHz are realized with quality factor Q 2000-2500.Pristine SiNWs, with fundamental resonances as high as 215 MHz, are measured using a VHF readout technique that is optimized for thesehigh resistance devices. The pristine resonators provide the highest Q's, as high as Q 13 100 for an 80 MHz device. SiNWs excel at masssensing; characterization of their mass responsivity and frequency stability demonstrates sensitivities approaching 10 zeptograms. TheseSiNW resonators offer significant potential for applications in resonant sensing, quantum electromechanical systems, and high frequencysignal processing.