Near UV LEDs Made with in Situ Doped p-n Homojunction ZnO Nanowire Arrays

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• 作者：Min-Teng Chen ; Ming-Pei Lu ; Yi-Jen Wu ; Jinhui Song ; Chung-Yang Lee ; Ming-Yen Lu ; Yu-Cheng Chang ; Li-Jen Chou ; Zhong Lin Wang ; Lih-Juann Chen
• 刊名：Nano Letters
• 出版年：2010
• 出版时间：November 10, 2010
• 年：2010
• 卷：10
• 期：11
• 页码：4387-4393
• 全文大小：552K
• 年卷期：v.10,no.11(November 10, 2010)
• ISSN：1530-6992

文摘

Catalyst-free p-n homojunction ZnO nanowire (NW) arrays in which the phosphorus (P) and zinc (Zn) served as p- and n-type dopants, respectively, have been synthesized for the first time by a controlled in situ doping process for fabricating efficient ultraviolet light-emitting devices. The doping transition region defined as the width for P atoms gradually occupying Zn sites along the growth direction can be narrowed down to sub-50 nm. The cathodoluminescence emission peak at 340 nm emitted from n-type ZnO:Zn NW arrays is likely due to the Burstein−Moss effect in the high electron carrier concentration regime. Further, the electroluminescence spectra from the p-n ZnO NW arrays distinctively exhibit the short-wavelength emission at 342 nm and the blue shift from 342 to 325 nm is observed as the operating voltage further increasing. The ZnO NW p-n homojunctions comprising p-type segment with high electron concentration are promising building blocks for short-wavelength lighting device and photoelectronics.

Keywords:

ZnO nanowires; p-n homojunction; Near UV LED; in situ doped