文摘
The synthesis of pure 未-MoN with desired superconducting properties usually requires extreme conditions, such as high temperature and high pressure, which hinders its fundamental studies and applications. Herein, by using a chemical solution method, epitaxial 未-MoN thin films have been grown on c-cut Al2O3 substrates at a temperature lower than 900 掳C and an ambient pressure. The films are phase pure and show a Tc of 13.0 K with a sharp transition. In addition, the films show a high critical field and excellent current carrying capabilities, which further prove the superior quality of these chemically prepared epitaxial thin films.