Influence of the Kinetic Adsorption Process on the Atomic Layer Deposition Process of (GeTe2)(1鈥?i>x)(Sb2Te3)x Layers Using Ge4+<

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• 作者：Taeyong Eom ; Taehong Gwon ; Sijung Yoo ; Byung Joon Choi ; Moo-Sung Kim ; Iain Buchanan ; Manchao Xiao ; Cheol Seong Hwang
• 刊名：Chemistry of Materials
• 出版年：2014
• 出版时间：February 25, 2014
• 年：2014
• 卷：26
• 期：4
• 页码：1583-1591
• 全文大小：421K
• 年卷期：v.26,no.4(February 25, 2014)
• ISSN：1520-5002

文摘

(GeTe₂)_(1鈥?i>x)(Sb₂Te₃)_x (GST) layers were deposited via atomic layer deposition (ALD) at growth temperatures ranging from 50 to 120 掳C using Ge(OCH₃)₄ or Ge(OC₂H₅)₄, Sb(OC₂H₅)₃, and [(CH₃)₃Si]₂Te as the metal鈥搊rganic precursors of the Ge, Sb, and Te elements, respectively. The GST layers with compositions lying on the GeTe₂鈥揝b₂Te₃ tie lines could be obtained by varying the ratio of the Ge鈥揟e and Sb鈥揟e ALD cycles. Although the incorporation of an Sb鈥揟e layer into the GST film occurred in a genuine ALD manner, that of the Ge鈥揟e layer was governed by the kinetically limited physisorption of Ge precursors. The incorporation behavior of the Ge precursor with different ligands was explained by the adsorption and desorption kinetics based on the Brunauer鈥揈mmett鈥揟eller isotherm. The ALD-like film growth behavior could be well-explained by the kinetically limited incorporation of Ge atoms.