Non-Lithographic Growth of Core鈥揝hell GaAs Nanowires on Si for Optoelectronic Applications

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• 作者：Myung-Ho Bae ; Bum-Kyu Kim ; Dong-Han Ha ; Sang Jun Lee ; Rahul Sharma ; Kyoung Jin Choi ; Ju-Jin Kim ; Won Jun Choi ; Jae Cheol Shin
• 刊名：Crystal Growth & Design
• 出版年：2014
• 出版时间：April 2, 2014
• 年：2014
• 卷：14
• 期：4
• 页码：1510-1515
• 全文大小：295K
• 年卷期：v.14,no.4(April 2, 2014)
• ISSN：1528-7505

文摘

We demonstrated a nonlithographic method for integrating GaAs nanowire (NW) array-based light-emitting diodes (LEDs) on silicon (Si) substrates. A sub-100 nm hole array on a deposited SiO₂ layer was patterned on an entire 2 in. Si wafer based on a sacrificed self-assembled InAs NW array. Then, a core鈥搒hell n鈥?i>p junction GaAs NW array was grown on exposed Si windows via the selective-area growth method. The electrical properties of the core鈥搒hell n鈥?i>p junction GaAs NW has been measured and compared to those of the core鈥搒hell junction NWs formed via the self-assembled growth method. Room temperature electroluminescence was successfully observed from the fabricated GaAs NW array-based LEDs. The core鈥搒hell junction III鈥揤 NW array epitaxially grown on a ubiquitous Si platform could be applied to future low-cost optical devices.