Direct Growth of High-Quality Graphene on High-魏 Dielectric SrTiO3 Substrates

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• 作者：Jingyu Sun ; Teng Gao ; Xiuju Song ; Yanfei Zhao ; Yuanwei Lin ; Huichao Wang ; Donglin Ma ; Yubin Chen ; Wenfeng Xiang ; Jian Wang ; Yanfeng Zhang ; Zhongfan Liu
• 刊名：Journal of the American Chemical Society
• 出版年：2014
• 出版时间：May 7, 2014
• 年：2014
• 卷：136
• 期：18
• 页码：6574-6577
• 全文大小：291K
• 年卷期：v.136,no.18(May 7, 2014)
• ISSN：1520-5126

文摘

High-quality monolayer graphene was synthesized on high-魏 dielectric single crystal SrTiO₃ (STO) substrates by a facile metal-catalyst-free chemical vapor deposition process. The as-grown graphene sample was suitable for fabricating a high performance field-effect transistor (FET), followed by a far lower operation voltage compared to that of a SiO₂-gated FET and carrier motilities of approximately 870鈥?050 cm²路V^鈥?路s^鈥? in air at rt. The directly grown high-quality graphene on STO makes it a perfect candidate for designing transfer-free, energy-saving, and batch production of FET arrays.