Efficient and Sustained Photoelectrochemical Water Oxidation by Cobalt Oxide/Silicon Photoanodes with Nanotextured Interfaces

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• 作者：Jinhui Yang ; Karl Walczak ; Eitan Anzenberg ; Francesca M. Toma ; Guangbi Yuan ; Jeffrey Beeman ; Adam Schwartzberg ; Yongjing Lin ; Mark Hettick ; Ali Javey ; Joel W. Ager ; Junko Yano ; Heinz Frei ; Ian D. Sharp
• 刊名：Journal of the American Chemical Society
• 出版年：2014
• 出版时间：April 30, 2014
• 年：2014
• 卷：136
• 期：17
• 页码：6191-6194
• 全文大小：284K
• 年卷期：v.136,no.17(April 30, 2014)
• ISSN：1520-5126

文摘

Plasma-enhanced atomic layer deposition of cobalt oxide onto nanotextured p⁺n-Si devices enables efficient photoelectrochemical water oxidation and effective protection of Si from corrosion at high pH (pH 13.6). A photocurrent density of 17 mA/cm² at 1.23 V vs RHE, saturation current density of 30 mA/cm², and photovoltage greater than 600 mV were achieved under simulated solar illumination. Sustained photoelectrochemical water oxidation was observed with no detectable degradation after 24 h. Enhanced performance of the nanotextured structure, compared to planar Si, is attributed to a reduced silicon oxide thickness that provides more intimate interfacial contact between the light absorber and catalyst. This work highlights a general approach to improve the performance and stability of Si photoelectrodes by engineering the catalyst/semiconductor interface.