Highly Sensitive, Photon Number Resolving Detectors Mediated by Phonons Using δ-Doped GaAs Transistors

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• 作者：Xiulai Xu ; Hugh Baker ; David A. Williams
• 刊名：Nano Letters
• 出版年：2010
• 出版时间：April 14, 2010
• 年：2010
• 卷：10
• 期：4
• 页码：1364-1368
• 全文大小：382K
• 年卷期：v.10,no.4(April 14, 2010)
• ISSN：1530-6992

文摘

We report a photon number-resolving detector using two-dimensional electron gas (2DEG)-based transistors. When the photon pulses impinge on the absorption region, the generated phonons dissipate ballistically in the 2DEG toward the trench isolated nanowire transistors near the surface. The phonon−electron interaction induces a positive conductance in the transistors, resulting in a current increase. With this principle, we obtain an internal quantum efficiency for this type of detector of up to 85%.