Synthesis of GaN Crystals Through Solid-State Metathesis Reaction Under High Pressure

详细信息    查看全文

• 作者：Li Lei ; Duanwei He*
• 刊名：Crystal Growth & Design
• 出版年：2009
• 出版时间：March 4, 2009
• 年：2009
• 卷：9
• 期：3
• 页码：1264-1266
• 全文大小：271K
• 年卷期：v.9,no.3(March 4, 2009)
• ISSN：1528-7505

文摘

Well-crystallized gallium nitride (GaN) crystals are prepared through an untraditional solid-state metathesis (SSM) reaction under high pressure between varying phases of lithium metagallate (LiGaO₂) and boron nitride (BN). The advantage of the method lies in the potential energy and cost savings over other conventional synthetic routes. Our results also demonstrate that lithium borate (LiBO₂) may be a new solution of GaN for large crystal growth. This discovery not only leads to a better understanding of the mechanisms of SSM reactions but also provides a starting point for mass production and growth of large single crystals of GaN from SSM reactions under high pressure.