Surfactant-Catalyzed Chemical Vapor Deposition of Copper Thin Films

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• 作者：Eui Seong Hwang and Jihwa Lee
• 刊名：Chemistry of Materials
• 出版年：2000
• 出版时间：August 2000
• 年：2000
• 卷：12
• 期：8
• 页码：2076 - 2081
• 全文大小：111K
• 年卷期：v.12,no.8(August 2000)
• ISSN：1520-5002

文摘

A novel concept of chemical vapor deposition that uses a simple atomic adsorbate as acatalytic surfactant is introduced and demonstrated for deposition of copper thin films fromCu^I(hfac)(vtms). A submonolayer of iodine atoms adsorbed on the copper film surface catalyzesthe surface reaction to reduce the activation energy from 15.3 kcal/mol for the uncatalyzeddeposition to 6.1 kcal/mol. As a result, the growth rate is enhanced by as much as ~100times and deposition is possible even at 50 C with a rate of 250 Å/min. The product analysisby gas chromatography-mass spectroscopy reveals that on an I-adsorbed surface Cu^I(hfac)_adfurther dissociates into Cu and (hfac)_ad by interacting with an I_ad atom, and (hfac)_adsubsequently recombines to desorb as (hfac)₂. For the uncatalyzed deposition, the disproportionation reaction between two [Cu^I(hfac)]_ad complexes was confirmed. Iodine adatomsalso act as a segregating surfactant to suppress the surface roughness, allowing depositionof 1 m thick films with a root-mean-square roughness of 35 Å. The electrical resistivity ofthe films is = 2 ± 0.2 m cm, close to the bulk value of 1.67 m cm.