Dislocation-Eliminating Chemical Control Method for High-Efficiency GaN-Based Light Emitting Nanostructures

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• 作者：Je-Hyung Kim ; Chung-Seok Oh ; Young-Ho Ko ; Suk-Min Ko ; Ki-Yon Park ; Myoungho Jeong ; Jeong Yong Lee ; Yong-Hoon Cho
• 刊名：Crystal Growth & Design
• 出版年：2012
• 出版时间：March 7, 2012
• 年：2012
• 卷：12
• 期：3
• 页码：1292-1298
• 全文大小：581K
• 年卷期：v.12,no.3(March 7, 2012)
• ISSN：1528-7505

文摘

A dislocation-eliminating chemical control method for high-quality GaN nanostructures together with various types of InGaN quantum well structures are demonstrated using a chemical vapor-phase etching technique. Unlike chemical wet etching, chemical vapor-phase etching could efficiently control the GaN and form various shapes of dislocation-free and strain-relaxed GaN nanostructures. The chemically controlled GaN nanostructures showed improved crystal quality due to the selective etching of defects and revealed various facets with reduced residual strain via the facet-selective etching mechanism. These structural properties derived excellent optical performance of the GaN nanostructures. The chemical vapor-phase etching method also showed possibilities of the fascinating applications for high-efficiency InGaN quantum well structures, such as InGaN quantum well layer on void embedded GaN layer, InGaN quantum well embedded GaN nanostructure, and InGaN/GaN core/shell nanostructure.