Angle-Dependent Carrier Transmission in Graphene p鈥搉 Junctions

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• 作者：S. Sutar ; E. S. Comfort ; J. Liu ; T. Taniguchi ; K. Watanabe ; J. U. Lee
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：September 12, 2012
• 年：2012
• 卷：12
• 期：9
• 页码：4460-4464
• 全文大小：328K
• 年卷期：v.12,no.9(September 12, 2012)
• ISSN：1530-6992

文摘

Angle-dependent carrier transmission probability in graphene p-n junctions is investigated. Using electrostatic doping from buried gates, p鈥搉 junctions are formed along graphene channels that are patterned to form different angles with the junction. A peak in the junction resistance is observed, which becomes pronounced with angle. This angular dependence is observed for junctions made on both exfoliated and CVD-grown graphene and is consistent with the theoretically predicted dependence of transmission probability on incidence angle.

Keywords:

Graphene; graphene p鈭抧 junctions; GPNJ; Klein+tunneling&qsSearchArea=searchText">Klein tunneling; particle chirality; chiral particles