High-Pressure Electrical Transport Behavior in WO3

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• 作者：Yuqiang Li ; Yang Gao ; Yonghao Han ; Qinglin Wang ; Yan Li ; Ningning Su ; Junkai Zhang ; Cailong Liu ; Yanzhang Ma ; Chunxiao Gao
• 刊名：The Journal of Physical Chemistry C
• 出版年：2012
• 出版时间：March 1, 2012
• 年：2012
• 卷：116
• 期：8
• 页码：5209-5214
• 全文大小：374K
• 年卷期：v.116,no.8(March 1, 2012)
• ISSN：1932-7455

文摘

The high-pressure electrical transport behavior of microcrystalline tungsten trioxides (WO₃) was investigated by direct current electrical resistivity measurement and alternate current impedance spectrum techniques in a diamond anvil cell up to 35.5 GPa. Discontinuous changes of electrical resistivity occurred during the pressure induced structure phase transitions at 1.8, 21.2, and 30.4 GPa. The irreversible resistivity reveals that the structure phase transition is not reversible. In addition, the abnormal changes of bulk resistance and transport activation energy at about 3 and 10 GPa are related to the isostructural phase transition reported by previous Raman study. The temperature induced resistivity change indicates that WO₃ is a semiconductor from ambient pressure to 25.3 GPa.