Visualizing Electrical Breakdown and ON/OFF States in Electrically Switchable Suspended Graphene Break Junctions

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• 作者：Hang Zhang ; Wenzhong Bao ; Zeng Zhao ; Jhao-Wun Huang ; Brian Standley ; Gang Liu ; Fenglin Wang ; Philip Kratz ; Lei Jing ; Marc Bockrath ; Chun Ning Lau
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：April 11, 2012
• 年：2012
• 卷：12
• 期：4
• 页码：1772-1775
• 全文大小：255K
• 年卷期：v.12,no.4(April 11, 2012)
• ISSN：1530-6992

文摘

Narrow gaps are formed in suspended single- to few-layer graphene devices using a pulsed electrical breakdown technique. The conductance of the resulting devices can be programmed by the application of voltage pulses, with voltages of 2.5 to 4.5 V, corresponding to an ON pulse, and 8 V, corresponding to an OFF pulse. Electron microscope imaging of the devices shows that the graphene sheets typically remain suspended and that the device conductance tends to zero when the observed gap is large. The switching rate is strongly temperature dependent, which rules out a purely electromechanical switching mechanism. This observed switching in suspended graphene devices strongly suggests a switching mechanism via atomic movement and/or chemical rearrangement and underscores the potential of all-carbon devices for integration with graphene electronics.

Keywords:

Suspended graphene; switches; electromigration; nonvolatile memory; break junction