Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates

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• 作者：Keng-Ku Liu ; Wenjing Zhang ; Yi-Hsien Lee ; Yu-Chuan Lin ; Mu-Tung Chang ; Ching-Yuan Su ; Chia-Seng Chang ; Hai Li ; Yumeng Shi ; Hua Zhang ; Chao-Sung Lai ; Lain-Jong Li
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：March 14, 2012
• 年：2012
• 卷：12
• 期：3
• 页码：1538-1544
• 全文大小：393K
• 年卷期：v.12,no.3(March 14, 2012)
• ISSN：1530-6992

文摘

The two-dimensional layer of molybdenum disulfide (MoS₂) has recently attracted much interest due to its direct-gap property and potential applications in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS₂ atomic thin layers is still rare. Here we report that the high-temperature annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur can produce large-area MoS₂ thin layers with superior electrical performance on insulating substrates. Spectroscopic and microscopic results reveal that the synthesized MoS₂ sheets are highly crystalline. The electron mobility of the bottom-gate transistor devices made of the synthesized MoS₂ layer is comparable with those of the micromechanically exfoliated thin sheets from MoS₂ crystals. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS₂ films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.

Keywords:

Transition metal dichalcogenides; molybdenum disulfide; layered materials; transistors; two-dimensional materials; semiconductors